savantic semiconductor product specification silicon npn power transistors 2SD2095 d escription with to-3p(h)is package built-in damper diode high voltage ,high speed low collector saturation voltage applications for color tv horizontal output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a i b base current 2.5 a p c collector power dissipation 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(h)is) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD2095 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter- base breakdown voltage i e =200ma , i c =0 5 v v cesat collector-emitter saturation voltage i c =3.5a; i b =0.8a 3.0 5.0 v v besat base-emitter saturation voltage i c =3.5a; i b =0.8a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 10 a h fe dc current gain i c =1a ; v ce =5v 8 f t transition frequency i c =0.1a ; v ce =10v 3 mhz c ob collector output capacitance i e =0 ; v cb =10v;f=1mhz 105 pf v f diode forward voltage i f =5a 1.6 2.0 v t f fall time i cp =3.5a ;i b1 (end) =0.8a 0.5 1.0 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD2095 package outline fig.2 outline dimensions (unindicated tolerance:0.15 mm)
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